Si Nanocrystals Deposited by HFCVD

Abstract:

The structural and optical properties of Si nanocrystal (Si-nc) embedded in a matrix of off-stoichiometric silicon oxide (SiO_x, x<2) films prepared by hot filament chemical vapor deposition technique were studied. The films emit a wide photoluminescent spectra and the maximum peak emission shows a blue-shift as the substrate temperature (Ts) decreases. Also, a wavelength-shift of the absorption edge in transmittance spectra is observed, indicating an increase in the energy band gap. The Si-nc’s size decreased from 6.5 to 2.5 nm as Ts was reduced from 1150 to 900 °C, as measured through High Resolution Transmission Electron Microscopy analysis. A combination of mechanisms is proposed to explain the photoluminescence in the SiO_x films, which involve SiO_x defects and quantum confinement effects.

• Periodical: Solid State Phenomena (Volume 194)
• Pages: 204-208
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.194.204
• Online since: November 2012
• Authors: José Alberto Luna-López, G. Garcia-Salgado, J. Carrillo-López, Dianeli E. Vázquez-Valerdi, A. Ponce-Pedraza, T. Díaz-Becerril, F.J. Flores Gracia, A. Morales-Sánchez
• Keywords: EG, HFCVD, HRTEM, PL, Si-nc, SiO_x

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