Synthesis of Ferromagnetic Germanides in 40Ge/60Mn Films: Magnetic and Structural Properties

Abstract:

Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °С. It is established that after annealing at ~120 °С, the ferromagnetic Mn₅Ge₃ phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °С leads to the formation of the ferromagnetic phase with a Curie temperature T_C ~ 360 K and magnetization M_S ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn₅Ge₃ lattice and the formation of the Nowotny phase Mn₅Ge₃С_xO_y. The initiation temperature (~120 °С) of the Mn₅Ge₃ phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in Ge_xMn_1-x diluted semiconductors. We conclude that the synthesis of the Mn₅Ge₃ phase is the moving force for the spinodal decomposition of the Ge_xMn_1-x diluted semiconductors.

• Periodical: Solid State Phenomena (Volume 215)
• Pages: 167-172
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.215.167
• Online since: April 2014
• Authors: Victor G. Myagkov*, A.A. Matsunin, Y.L. Mikhlin, Victor S. Zhigalov, Liudmila E. Bykova, I.A. Tambasov, G.N. Bondarenko, Gennady S. Patrin, Dmitry A. Velikanov
• Keywords: Diluted Semiconductors, Manganese Germanides, Solid-State Reaction, Spinodal Decomposition

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