Investigation of the Co Films Growth on Si (111) Surface with Copper Silicide Nanostructures

Konstantin Ermakov; Alexey V. Ognev; Alexander S. Samardak; Alexey Kozlov; Artur Ovsaynnikov; Evgeniy Mikoluk; Ludmila A. Chebotkevich; Alexander Saranin; Lazar Romashev; Nicolay Solin; Vladimir Ustinov

doi:10.4028/www.scientific.net/SSP.215.204

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Investigation of the Co Films Growth on Si (111) Surface with Copper Silicide Nanostructures
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HomeSolid State PhenomenaSolid State Phenomena Vol. 215Investigation of the Co Films Growth on Si (111)...

Investigation of the Co Films Growth on Si (111) Surface with Copper Silicide Nanostructures

Abstract:

In this study the features of the growth processes of copper silicide nanostructures on Si (111) were investigated. The nanostructures were grown by molecular beam epitaxy. It has been shown that the islands and nanowires are formed at the substrate temperature 550°C. The nanostructures have ideal facets and lateral edges. The long side of nanowires is oriented along the crystallographic direction <110> Si. We have shown that there is a range of thicknesses at which nanowires generally grow.

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Periodical:

Solid State Phenomena (Volume 215)

Pages:

204-207

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.215.204

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Online since:

April 2014

Authors:

Konstantin Ermakov*, Alexey V. Ognev, Alexander S. Samardak, Alexey Kozlov, Artur Ovsaynnikov, Evgeniy Mikoluk, Ludmila A. Chebotkevich, Alexander Saranin, Lazar Romashev, Nicolay Solin, Vladimir Ustinov

Keywords:

Copper Silicide, Nanoislands, Nanostructure, Nanowire

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