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HomeSolid State PhenomenaSolid State Phenomena Vol. 215Scaling in the Quantum Hall Regime for a Double...

Scaling in the Quantum Hall Regime for a Double Quantum Well Nanostructure in High Magnetic Field

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Abstract:

The longitudinal ρ_xx(B) and Hall ρ_xy(B) magnetoresistances are investigated in the integer quantum Hall effect regime in n-InGaAs/GaAs double quantum well nanostructures in the magnetic fields B up to 16 T at temperatures T = (0.05-4.2) K before and after IR illumination. The analysis of the quantum Hall effect plateau-plateau transitions based on the scaling hypothesis with regard to electron-electron interaction was carried out.

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Solid State Phenomena (Volume 215)

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208-213

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.215.208

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Online since:

April 2014

Authors:

Yurii G. Arapov, Svetlana V. Gudina, Anna S. Klepikova, Vladimir N. Neverov, Sergey G. Novokshonov, Vsevolod I. Okulov, Tatiana B. Charikova, German I. Harus, Nina G. Shelushinina*, Mikhail V. Yakunin

Keywords:

Critical Indexes, Double Quantum Well, Nanostructure, Quantum Hall Effect, Scaling

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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