Structural and Electro-Physical Properties of ZnO Films, Obtained by a MOCVD Method on Glass and Silicon Substrates

Abstract:

This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc and diethyldithiocarbamate of zinc on silicon substrates at 280-320 ^оС substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.

• Periodical: Solid State Phenomena (Volume 230)
• Pages: 205-210
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.230.205
• Online since: June 2015
• Authors: K.A. Avramenko, Nina N. Roshchina*, G.P. Olkhovik, Petro S. Smertenko, Lyudmyla V. Zavyalova
• Keywords: Diethyldithiocarbamate of Zinc, Differential Approach, Electrophysical Diagnostics, MOCVD Method, Zinc Acetylacetonate, ZnO/Si Heterojunction

References

[1] Information on http: /www. flextech. org/documents/nanomarkets_reports/ZNO_ES. pdf. Markets for Zink Oxide in Electronics, March (2009).

[2] N.M. Roshchina, P. Smertenko, V.G. Stepanov et al., Some properties of thin film structures on the base of ZnO obtained by MOCVD method, Solid State Phenomena. 200 (2013) 3-9.

DOI: 10.4028/www.scientific.net/ssp.200.3

[3] T. G. Kryshtab, L. V. Zavyalova, N. N. Roshchina et al., Preparation and properties of thin ZnS: Cu films phosphors, Thin Solid Films. 515 (2006) 513-516.

DOI: 10.1016/j.tsf.2005.12.284

[4] S. Khomchenko, L. V. Zavyalova, N. N. Roshchina et al., Fabrication and properties of ZnO: Cu and ZnO: Ag thin films, Superlattices and Microstructures. 42 (2007) 94-98.

DOI: 10.1016/j.spmi.2007.04.016

[5] P. Smertenko, L. Fenenko, L. Brehmer and S. Schrader, Differential approach to the study of integral characteristics in polymer films, Advances in Colloid and Interface Science. 116 (2005) 255-261.

DOI: 10.1016/j.cis.2005.05.005

[6] R. Ciach, Yu. Dotsenko, P. Smertenko et al., Injection Technique for Study of Solar Cells Test Structures, Solar Energy Materials & Solar Cells. 76 (2003) 613-624.

DOI: 10.1016/s0927-0248(02)00271-4

[7] Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition / Tomasz A. Krajewski, Grzegorz Luka, Sylwia Gieraltowska, Adam J. Zakrzewski, Petro S. Smertenko, Piotr Kruszewski, Lukasz Wachnicki, Bartlomiej S. Witkowski, Elzbieta Lusakowska, Rafal Jakiela, Marek Godlewski, and Elzbieta Guziewicz / Applied Physics Letters 98, (2011).

DOI: 10.1063/1.3604796

[8] Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications /T.A. Krajewski, G. Luka, P.S. Smertenko, A.J. Zakrzewski, K. Dybko, R. Jakiela, L. Wachnicki, S. Gieraltowska, B.S. Witkowski, M. Godlewski and E. Guziewicz / Acta Physica Polonica A, 120 (2011).

DOI: 10.12693/aphyspola.120.a-17

[9] K. Thonke, T. H. Gruber, N. Teofilov et al., Donor–acceptor pair transitions in ZnO substrate material, Physica B. 308 (2001) 945-948.

DOI: 10.1016/s0921-4526(01)00877-8

[10] S.B. Zhang, S. -H. Wei and A. Zunger, Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO, Phys. Rev. B. 63 (2001) 075205.

DOI: 10.1103/physrevb.63.075205