Anomalous Hall Effect in 2D DMS

Leonid N. Oveshnikov; V.A. Kulbachinskii; Alexander B. Davydov; Boris A. Aronzon

doi:10.4028/www.scientific.net/SSP.233-234.109

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HomeSolid State PhenomenaSolid State Phenomena Vols. 233-234Anomalous Hall Effect in 2D DMS

Anomalous Hall Effect in 2D DMS

Abstract:

Transport and magnetic properties of δ-Mn doped GaAs/InGaAs/GaAs quantum wells (QW) with various In content were studied at temperatures 4.2K≤T≤300K. Fluctuation potential (FP) appeared to be crucial for transport characteristics of structures under investigation. The magnetic percolation transition was observed at temperature T_p in the range 20 - 40K. The T_p dependence on the In content is nonmonotonic due to the peculiarities of free-carrier mediated exchange interaction mechanisms. The change of the anomalous Hall effect (AHE) sign with decreasing temperature was detected at temperatures close to the T_p. The main reason of the AHE sign change is the variation of contributions of different AHE mechanisms (intrinsic and side-jump) caused by the reduction of spin-dependent scattering intensity with temperature decrease. We believe that our results are the experimental observation of the AHE intrinsic mechanism in 2D.

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Solid State Phenomena (Volumes 233-234)

Pages:

109-112

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.233-234.109

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Online since:

July 2015

Authors:

Leonid N. Oveshnikov*, V.A. Kulbachinskii, Alexander B. Davydov, Boris A. Aronzon

Keywords:

Anomalous Hall Effect, Delta-Mn Doping, Dilute Magnetic Semiconductor, Quantum Well

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References

[1] N. Nagaosa, J. Sinova, S. Onoda, et. al., Reviews of Modern Physics 82, 1539-1592 (2010).

Google Scholar

[2] J. E. Schirber, I. J. Fritz and L. R. Dawson, Appl. Phys. Lett. 46, 187 (1985).

Google Scholar

[3] G. M. Minkov, A. A. Sherstobitov, A. V. Germanenko, et. al., Phys. Rev. B 71, 165312 (2005).

Google Scholar

[4] B. A. Aronzon, M. V. Kovalchuk, E. M. Pashaev, et. al., J. Phys.: Cond. Mat. 20, 145207 (2008).

Google Scholar

[5] B. A. Aronzon, M. A. Pankov, V. V. Rylkov, et. al., J. Appl. Phys. 107, 023905 (2010).

Google Scholar

[6] Vikram Tripathi, Kusum Dhochak, B. A. Aronzon, et. al., Phys. Rev. B 84, 075305 (2011).

Google Scholar

[7] S. H. Chun, Y. S. Kim, H. K. Choi, et. al., Phys. Rev. Lett. 98, 026601 (2007).

Google Scholar

[8] D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, et. al., Phys. Rev. Lett. 104, 106601 (2010).

Google Scholar