Galvanomagnetic and Magnetic Properties of Pb1-yScyTe

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Abstract:

The galvanomagnetic properties in weak magnetic fields (4.2≤T≤300 K, B≤0.07 T) as well as magnetic properties (2≤T≤300 K, B≤9 T) of the single-crystal Pb1-yScyTe (y≤0.02) alloys have been investigated. We find that an increase of Sc impurity content leads to a monotonous growth of the free electron concentration (from 1016 cm-3 to 1020 cm-3). In heavily doped alloys (y>0.01), it tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant level located inside the conduction band. The energy of the level is estimated (ESc≈Ec+280 meV) and the model of electronic structure rearrangement of Pb1-yScyTe alloys with doping is proposed. In the frame of this model, using experimental temperature and magnetic field dependences of magnetization, the concentrations of magnetically active scandium ions are determined and connection of the electronic structure with the magnetic properties of the alloys are discussed.

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Solid State Phenomena (Volumes 233-234)

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97-100

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July 2015

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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[1] T. Story, E. Grodzicka, B. Witkowska, J. Gorecka, W. Dobrowolski, Transport and magnetic properties of PbTe: Cr and PbSnTe: Cr, Acta Phys. Polon. 82 (1992) 879-881.

DOI: 10.12693/aphyspola.82.879

Google Scholar

[2] F.F. Sizov, V.V. Teterkin, L.V. Prokofeva, E.A. Gurieva, Influence of a transition element impurity (Ti) on the energy-band spectrum of PbTe, Sov. Phys. Semicond. 14 (1980) 1063-1064.

Google Scholar

[3] V.D. Vulchev, L.D. Borisova, S.K. Dimitrova, Preparation and properties of the Pb1-xCrxTe, Phys. Status Solidi A 97 (1986) K79-K82.

DOI: 10.1002/pssa.2210970150

Google Scholar

[4] D.T. Morelli, J.P. Heremans, C.M. Thrush, Magnetic and thermal properties of iron-doped lead telluride, Phys. Rev. B 67 (2003) 035206.

DOI: 10.1103/physrevb.67.035206

Google Scholar

[5] R. Dornhaus, G. Nimtz, B. Schlicht, Narrow-Gap Semiconductors, Springer-Verlag, Berlin, Heidelberg, New York, Tokyo, (1983).

DOI: 10.1007/bfb0044919

Google Scholar