Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer Delta-Doped with Mn

V.A. Kulbachinskii; Leonid N. Oveshnikov; Boris A. Aronzon

doi:10.4028/www.scientific.net/SSP.233-234.93

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HomeSolid State PhenomenaSolid State Phenomena Vols. 233-234Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer...

Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer Delta-Doped with Mn

Abstract:

Transport, magnetotransport and magnetic properties of structures GaAs/InAs/GaAs with a InAs quantum dot (QD) layer have been investigated in the temperature interval 4.2<T<300 K. The structures were delta-doped by Mn from a one side to provide magnetic properties and by carbon from the other side to enhance a p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect was observed at low T. The role of additional disorder in conducting channel due to the QD layer was investigated. It is shown a principal role of a fluctuation potential of Mn layer separated from conducting QD layer by a spacer in anomalous transport properties of structures. The negative magnetoresistance was observed at low T due to the reduction of the spin-flip scattering by aligning spins by magnetic field.

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Solid State Phenomena (Volumes 233-234)

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93-96

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https://doi.org/10.4028/www.scientific.net/SSP.233-234.93

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Online since:

July 2015

Authors:

V.A. Kulbachinskii*, Leonid N. Oveshnikov, Boris A. Aronzon

Keywords:

Delta-Mn Doping, Diluted Magnetic Semiconductors, Ferromagnetism, InAs Quantum Dots

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