Atomic Force Microscopy and EDX Analysis for Investigation Photoconductive LT-GaAs Terahertz Antennas

Sergey Nomoev; Ivan Vasilevskii; Erzhena Khartaeva

doi:10.4028/www.scientific.net/SSP.271.92

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Atomic Force Microscopy and EDX Analysis for Investigation Photoconductive LT-GaAs Terahertz Antennas

Abstract:

We investigate the influence of the surface properties of a low-temperature-grown GaAs photoconductive antenna on the terahertz (THz) response power. A comparison to the surface roughness which is extracted from an atomic force microscope is given. We used energy dispersive x-ray spectroscopy (EDX) measurements to determine the Ga/As compositional ratio in the LT-GaAs.

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Periodical:

Solid State Phenomena (Volume 271)

Pages:

92-97

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.271.92

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Online since:

January 2018

Authors:

Sergey Nomoev*, Ivan Vasilevskii, Erzhena Khartaeva

Keywords:

Atomic Force Microscopy, Low-Temperature Grown Gallium Arsenide, Photoconductive Antennas

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