Growing of AlInGaAsP Solid Solutions on InP Substrates for Photovoltaic Converters

Abstract:

The article contains a description of various growing conditions for isoparametric heterostructures based on InP. It is shown that the structural perfection of solid solutions grown on InP substrates is influenced by parameters, such as the temperature of the epitaxy process, the temperature gradient, and the composition and thickness of the liquid zone. By analyzing the quality of the surface and the structural perfection of isoparametric AlGaInAsP solid solutions, based on InP, optimal parameters of the zone recrystallization process in the temperature gradient field (TGZR), at which the epitaxial films had minimal roughness and high crystalline perfection, were found.

• Periodical: Solid State Phenomena (Volume 284)
• Pages: 188-193
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.284.188
• Online since: October 2018
• Authors: L.S. Lunin*, M.L. Lunina, A.E. Kazakova
• Keywords: AlInGaAsP / InP Solid Solutions, Lattice Period, Solar Cell, Temperature Gradient, Thickness of the Liquid Zone

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