Preparation, Characterization, and FET Properties of 3,3',5,5'-Tetra-Phenyldiphenoquinone

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Abstract:

In this work, tetraphenyldiphenoquinone (DPQ) was synthesized and characterized by single crystal structure analysis, ultraviolet–visible spectroscopy (UV–Vis) and cyclic voltammetry (CV). DPQ–based organic field-effect transistors (OFET) were fabricated with bottom contact configuration using bare SiO2/Si substrate and hexamethyldisilazane (HMDS) treated substrate, respectively. The HMDS-treated device showed hole mobility of 8.7 × 10−7 cm2 V−1 s−1, current on/off ratio of 1.2 × 102 and threshold voltage of −39 V. Devices with bare substrate showed no FET behaviors. Finally, film morphology was investigated by X-ray diffraction (XRD) analyses and the results showed that the HMDS treatment exhibits better crystallinity of DPQ on the film thus obtaining FET performance.

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Solid State Phenomena (Volume 288)

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44-50

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March 2019

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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