Magnetic Cooperative Phenomenon with Unpaired sp-Electrons System by MBE Low-Temperature Growth

Abstract:

We present a new possibility of crystal growth as synthesis of materials containing high concentrations of unpaired sp electrons by growth of Be doped Gallium Arsenides at low temperatures of 200-3000C using Molecular Beam Epitaxy (MBE) and investigate a possibility of applications of magnetotransport properties based on these unpaired sp-electrons to spintronics devices.The present study using high concentration of unpaired sp-electrons by the growth of Beryllium-doped GaAs layers at low temperatures resulted in a cooperative transition of localized spins at low temperature and also affected the mechasnism of tranport properties of the sample from hopping conduction to valence band conduction.This attempts will give rise to a possibility of adding new functions to existing electronic devices.

• Periodical: Solid State Phenomena (Volume 290)
• Pages: 336-341
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.290.336
• Online since: April 2019
• Authors: Mohd Ambri Mohamed*, Burhanuddin Yeop Majlis
• Keywords: Cooperative Transition, Localized Spins, Low Temperature Grown Gallium Arsenide, Molecular Beam Epitaxy (MBE)

References

[1] Tobias Kosub et al., Nature Communications 8,13985 (2017).

[2] T. Jungwirth, X. Marti, P. Wadley, J. Wunderlich, Nature Nanotechno. 11, 231–241 (2016).

[3] P. Wadley et al., Science 351, 587–590 (2016).

[4] A. Blandin, J. Appl. Phys.  39, 1285 (1968).

[5] J. Philip et al., Nature Materials 5, 298–304 (2006).

[6] C. Kittel, Introduction to Solid State Physics, 5th ed. (Wiley, New York, 1976), p.360.

[7] N. Inami, M. A. Mohamed, E. Shikoh, A. Fujiwara, Appl. Phys. Lett. 92 (24), 243115 (2008).

DOI: 10.1063/1.2949075

[8] D.W. Abraham, M. M. Frank, S. Guha, Appl. Phys. Lett. 87, 252502 (2005).

[9] Y.-C. Chi, Y. –Y. Wei, J. –H. Chao, Y. Liou, Appl. Phys. Lett. 93, 036101 (2008).

[10] K. W. Bae, M. A. Mohamed, D.W. Jung, N. Otsuka, J. Appl. Phys. 109 (7), 073918 (2011).

[11] A. Suda and N. Otsuka, Appl. Phys. Lett. 73,1529 (1998).

[12] D. C. Look, in Properties of Gallium Arsenide, 3rd ed., edited by M. R. Brozel and G.E. Stillman (INSPEC, London, 1996), p.684.

[13] M. A. Mohamed, P. T. Lam, K. W. Bae, N. Otsuka,, J. Appl. Phys. 110 (12), 123716 (2011).

[14] P. W. Anderson and P. R. Weiss, Rev. Mod. Phys. 25, 269 (1953).

[15] M.A. Mohamed, P. T. Lam, N. Otsuka, J. Crystal Growth 378, pp.329-332 (2013).

[16] M. A. Mohamed, P. T. Lam, N. Otsuka, J. Appl. Phys. 114 (8), 083716 (2013).

[17] Jiri Tucek, Katerina Hola et al., Nat Commun. 8: 14525 (2017).

[18] Yuanyuan Sun, Yongping Zheng et al., npj Quantum Materials 2:5 (2017).

[19] A. Altintas, A.D. Guuclu, Solid State Communications 281, p.48 (2018).

[20] Michael Slota, Ashok Keerthi et al., Nature 557, p.691 (2018).