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HomeSolid State PhenomenaSolid State Phenomena Vol. 310The Research for Approaches to Increase Power of...

The Research for Approaches to Increase Power of the Compact THz Emitters Based on Low-Temperature Gallium Arsenide Heterostructures

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Abstract:

The design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 °C, 230 °C, 240 °C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.

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Advanced Research in Materials Science III

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Periodical:

Solid State Phenomena (Volume 310)

Pages:

101-108

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.310.101

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Online since:

September 2020

Authors:

Sergey Nomoev*, Ivan Vasilevskii, Alexander Vinichenko

Keywords:

Heterostructure, Interdigitated Topology, Low-Temperature Grown of Gallium Arsenide, Molecular Beam Epitaxy, Photoconductive Antenna, THz-Radiation

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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