Influence of Structure-Phase State on Surface Morphology of FeSi2 Nanofilms During RBE-MBE Growth on Si (001) 2×1

Nikolay I. Plusnin

doi:10.4028/www.scientific.net/SSP.312.62

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Influence of Structure-Phase State on Surface Morphology of FeSi₂ Nanofilms During RBE-MBE Growth on Si (001) 2×1

Abstract:

The structure, phase composition, and morphology of FeSi and FeSi₂ nanofilms grown by three alternations of Fe (with a wedge-shaped thickness in the range 0 ‒ 2 ml) and Si (with a thickness 1 ML) depositions on a Si (001) 2×1 substrate heated to 400 °C were studied. According to Auger electron spectroscopy and electron energy loss, FeSi and FeSi₂ films were formed before and after the third deposition of Si, respectively. With this, a FeSi₂ film had ~1.5 ML of Si, which segregated on its surface. Both films consisted of a wetting coating (WL) and bulk phase forming at 2‒3 ML and after 3 ML of Fe, respectively. According to data of low electron energy diffraction, these films had a nanocrystalline structure. Moreover, according atomic force microscopy, deep square pores were formed in FeSi₂ films. They had a depth of 18‒10 nm, which was decreased and then increased before and, respectively, after Fe thickness ~ 3 ML.

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Periodical:

Solid State Phenomena (Volume 312)

Pages:

62-67

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.312.62

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Online since:

November 2020

Authors:

Nikolay I. Plusnin*

Keywords:

Atomic Force Microscopy, Auger-Electron Spectroscopy, Electron Energy Loss Spectroscopy, FeSi, FeSi₂, Low Electron Energy Diffraction, Molacular Beam Epitaxy, Nanofilm, Reactive Beam Epitaxy, Si (001)

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References

[1] N. I. Plusnin, Wetting Layer and Formation of Metal-Semiconductor Interface, Defect and Diffusion Forum (Trans Tech Publications Ltd). 386 (2018) 9-14.

DOI: 10.4028/www.scientific.net/ddf.386.9

Google Scholar

[2] L. J. Chen, H. C. Cheng, and W. T. Lin, Epitaxial growth of transition metal silicides on silicon, MRS Online Proceedings Library Archive, Volume 54 (Symposium E – Thin Films–Interfaces and Phenomena). (1985) 245-254.

DOI: 10.1557/proc-54-245

Google Scholar

[3] S. Kennou, N. Cherief, R. C. Cinti, T. N. Tan, The influence of steps on the epitaxial growth of iron-silicide on Si (001), Surface Science. 211 (1989) 685-691.

DOI: 10.1016/0039-6028(89)90829-7

Google Scholar

[4] T. Suemasu, M. Tanaka, T. Fujii, S. Hashimoto, Y. Kumagai, F Hasegawa, Aggregation of monocrystalline β-FeSi2 by annealing and by Si overlayer growth, Japanese journal of applied physics. 36(9A) (1997) L1225.

DOI: 10.1143/jjap.36.l1225

Google Scholar

[5] J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, M.A. Nikolet, M. Nathan, Epitaxial films of semiconducting FeSi2 on (001) silicon. Applied physics letters. 56(21) (1990) 2126-2128.

DOI: 10.1063/1.103235

Google Scholar

[6] N. Hiroi, T. Suemasu, K. I. Takakura, N. Seki, F. Hasegawa, Direct Growth of [100]-Oriented High-Quality β-FeSi2 Films on Si (001) Substrates by Molecular Beam Epitaxy, Japanese Journal of Applied Physics. 40(10A) (2001) L1008.

DOI: 10.1143/jjap.40.l1008

Google Scholar

[7] K. I. Takakura, T. Suemasu, Y. Ikura, F. Hasegawa, Control of the Conduction Type of Nondoped High Mobility β-FeSi2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios, Japanese Journal of Applied Physics. 39(8A) (2000) L789.

DOI: 10.1143/jjap.39.l789

Google Scholar