Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning

Heon Yul Ryu; Palwasha Jalalzai; Nagendra Prasad Yerriboina; Tae Gon Kim; Satomi Hamada; Jin Goo Park

doi:10.4028/www.scientific.net/SSP.314.270

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HomeSolid State PhenomenaSolid State Phenomena Vol. 314Effect of Dissolved Oxygen on Removal of...

Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning

Abstract:

A systematic study of the adsorption of benzotriazole on Co surface and its removal in aqueous solutions was carried out for post-CMP cleaning application. Static etch rate (SER) measurements and electrochemical impedance spectroscopy (EIS) were employed. The experimental results show that BTA adsorbed well on Co surface when it exposed to BTA solution at neutral and alkaline pH. BTA did not adsorb due to active Co dissolution at acidic pH. The effect of dissolved oxygen (DO) concentration in de-ionized (DI) water on the removal of Co-BTA complex layer was investigated. At DI water rinse process after BTA treatment, Co-BTA layer was maintained on Co surface when DO concentration of DI water was low. Interestingly, BTA was removed by DI water with high DO concentration.

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Solid State Phenomena (Volume 314)

Pages:

270-274

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.270

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Online since:

February 2021

Authors:

Heon Yul Ryu, Palwasha Jalalzai, Nagendra Prasad Yerriboina, Tae Gon Kim, Satomi Hamada, Jin Goo Park*

Keywords:

Adsorption, Benzotriazole, Cobalt, Dissolved Oxygen, Post Co-CMP Cleaning

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References

[1] J.-H. Han, Chemical Mechanical Polishing Innovation as a Key Technology for sub-10nm Logic Device, China Semiconductor Technology International Conference (CSTIC) 2016, Shanghai, China (2016).

Google Scholar

[2] H. Nishizawa, H. Nojo and A. Isobe, Fundamental Study of Chemical-Mechanical Polishing Slurry of Cobalt Barrier Metal for the Next-Generation Interconnect Process, Jpn. J. Appl. Phys. 49 (2010) 05FC03-1-05FC03-2.

DOI: 10.1143/jjap.49.05fc03

Google Scholar

[3] D. Gallant, M. Pezolet and S. Simard, Inhibition of cobalt active dissolution by benzotriazole in slightly alkaline bicarbonate aqueous media, Electrochim. Acta 52 (2007) 4927-4941.

DOI: 10.1016/j.electacta.2007.01.057

Google Scholar

[4] B. J. Cho, S. Shima, S. Hamada and J. G. Park, Investigation of Cu-BTA complex formation during Cu chemical mechanical planarization process, Appl. Surf. Sci., 384 (2016) 505-510.

DOI: 10.1016/j.apsusc.2016.05.106

Google Scholar

[5] B. J. Cho, J. Y. Kim, S. Hamada, S. Shima and J. G. Park, Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation, Jpn. J. Appl. Phys. 55 (2016) 06JB01-1-06JB01-5.

DOI: 10.7567/jjap.55.06jb01

Google Scholar

[6] M. Imai, Y. Yamashita, T. Futatsuki, M. Shiohara, S. Kondo and S. Saito, Effect of Dissolved Oxygen on Cu Corrosion in Single Wafer Cleaning Process, Jpn. J. Appl. Phys. 48 (2009) 04C023-1-04C023-4.

DOI: 10.1143/jjap.48.04c023

Google Scholar

[7] E. Lie and T. Welander, Influence of dissolved oxygen and oxidation–reduction potential on the denitrification rate of activated sludge, Wat. Sci. Tech., 30 (1994) 91-100.

DOI: 10.2166/wst.1994.0256

Google Scholar

[8] W. A. Badawy, F. M. Al-Kharafi and J. R. Al-Ajmi, Electrochemical behaviour of cobalt in aqueous solutions of different pH, J. Appl. Electrochem. 30 (2000) 693-704.

DOI: 10.1023/a:1003893122201

Google Scholar