Removal of Post Etch Residue on BEOL Low-K with Nanolift

Abstract:

Particle removal from BEOL low-k structures is studied using a novel particle removal technique, called Nanolift which removes particles from the substrate by forming a thin polymer film on the surface and removing the polymer film together with the particles. It was confirmed that Nanolift is capable to remove TiF_x particles successfully which are generated during the low-k dry etch process for dual damascene structure formation for BEOL interconnect fabrication. Pattern collapse of the fragile low-k structure was confirmed to be prevented by Nanolift in comparison with conventional dual fluid spray cleaning method. FTIR results show that Nanolift leaves no residual polymer remain in low-k films and K-value shift by the Nanolift process was negligible and comparable with the conventional formulated chemistry cleaning process. From these results, Nanolift can be concluded as a suitable cleaning process for advanced BEOL fabrication process.

• Periodical: Solid State Phenomena (Volume 314)
• Pages: 277-281
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.314.277
• Online since: February 2021
• Authors: Yuya Akanishi*, Quoc Toan Le, Efrain Altamirano-Sanchez
• Keywords: BEOL, Nanolift, Post Etch Residue Removal, Wet Clean

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