Effect of Surface Chemistry on Ruthenium Wet Etching

Quoc Toan Le; E. Kesters; M. Doms; Efrain Altamirano-Sanchez

doi:10.4028/www.scientific.net/SSP.314.302

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Effect of Surface Chemistry on Ruthenium Wet Etching
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HomeSolid State PhenomenaSolid State Phenomena Vol. 314Effect of Surface Chemistry on Ruthenium Wet...

Effect of Surface Chemistry on Ruthenium Wet Etching

Abstract:

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

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Periodical:

Solid State Phenomena (Volume 314)

Pages:

302-306

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.302

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Online since:

February 2021

Authors:

Quoc Toan Le*, E. Kesters, M. Doms, Efrain Altamirano-Sanchez

Keywords:

Metal Etching, Metal Recess, Ruthenium Etch, Surface Oxidation

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