Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging

Rogier Evertsen; Nicolle Beckers; Shao Ying Wang; Richard van der Stam

doi:10.4028/www.scientific.net/SSP.314.312

Paper Titles

Tribological Characterization of Anionic Supramolecular Assemblies in Post-STI-CMP Cleaning Solution Using a Novel Post-CMP PVA Brush Scrubber
p.264

Effect of Dissolved Oxygen on Removal of Benzotriazole from Co during a Post-Co CMP Cleaning
p.270

Removal of Post Etch Residue on BEOL Low-K with Nanolift
p.277

Copper Catalysis Effect Investigation for TiW Etch Process on Patterned Wafers
p.282

Selective Nickel Platinum Removal without Titanium Nitride Metal Gate Corrosion
p.289

Roughness and Uniformity Control during Wet Etching of Molybdenum
p.295

Effect of Surface Chemistry on Ruthenium Wet Etching
p.302

Selective Ru or Co Etch for 3nm Applications
p.307

Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging
p.312

HomeSolid State PhenomenaSolid State Phenomena Vol. 314Remote Plasma Etching of Backend Semiconductor...

Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging

Abstract:

This paper describes a study on the remote plasma etching of silicon-based semiconductor wafers after laser separation. Several process parameters having impact on the chip reliability, expressed as changes in die material strength, have been studied and optimized. The results show the potential of fluorine-based plasma processing for cleaning dies and improving die performance and thus have a role as a process enabling advanced packaging technologies.