Solid State Phenomena Vol. 314

Abstract: Selective Cobalt (Co) and Ruthenium (Ru) etch chemistries are developed to provide controlled etch options with various metallization, including Al, Cu, W, Co, Ru, TiN and TaN. The pH effects on Co, Cu and W etching are reported. Diluted acids, such as 1% HF and 1% HCl, demonstrate etch rate profiles suitable for selective Co vs. W etch applications. Ru etch chemistries are alkaline oxidative based and expanded to meet 3 nm and below integration needs. Versatile applications include highly boosted Ru etch rates for thermally annealed Ru layers and TiN compatible WNx or WCN selective etching at ultra-dilutions.

Abstract: This paper describes a study on the remote plasma etching of silicon-based semiconductor wafers after laser separation. Several process parameters having impact on the chip reliability, expressed as changes in die material strength, have been studied and optimized. The results show the potential of fluorine-based plasma processing for cleaning dies and improving die performance and thus have a role as a process enabling advanced packaging technologies.