Numerical Modeling of the Anomalous Low-Temperature Dependence of the Tunneling Conductance of a "Dirty" N-I-N Junction

Natalia V. Kirpichenkova; Oleg I. Lozin; Anastasia A. Kosach

doi:10.4028/www.scientific.net/SSP.316.1004

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Numerical Modeling of the Anomalous Low-Temperature Dependence of the Tunneling Conductance of a "Dirty" N-I-N Junction

Abstract:

A numerical study of the low-temperature tunneling conductance G(T) of the “dirty” (low concentrations of the same non-magnetic impurities in the I layer) N-I-N junction (N is a normal metal; I is an insulator) with random quantum jumpers penetrating the disordered I-layer is performed. In a wide range of low impurity concentrations, the dependence G(T) anomalously, both qualitatively and quantitatively, differs from the corresponding dependence G₀(T) in the “pure” (without impurities in the I layer) N-I-N junction. The numerical analysis of the dependence G(T) shows the possibility of the experimental manifestation of these anomalies.

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Periodical:

Solid State Phenomena (Volume 316)

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1004-1010

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.316.1004

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Online since:

April 2021

Authors:

Natalia V. Kirpichenkova, Oleg I. Lozin*, Anastasia A. Kosach

Keywords:

Disordered Tunnel Junctions, Quantum Resonant-Percolation Trajectories, Tunneling Conductance

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