Influence of Three-Component Barrier Layers on Optical Properties of Photodetectors with Quantum Dots

Eduard E. Blokhin; Vladimir A. Irkha; Alexandr S. Pashchenko

doi:10.4028/www.scientific.net/SSP.316.999

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HomeSolid State PhenomenaSolid State Phenomena Vol. 316Influence of Three-Component Barrier Layers on...

Influence of Three-Component Barrier Layers on Optical Properties of Photodetectors with Quantum Dots

Abstract:

The results of the presented studies demonstrate the possibility of using two and three component solid solutions, based on elements of the A3B5 groups, as thin barrier layers to cover an array of structured InAs quantum dots for photoactive heterointerfaces of solar energy. When using three-component solid solutions for QD barrier layers, a decrease in the thermionic generation in the near infrared spectrum and a decrease in the dark current of the heterointerface are obtained.

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Periodical:

Solid State Phenomena (Volume 316)

Pages:

999-1003

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.316.999

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Online since:

April 2021

Authors:

Eduard E. Blokhin*, Vladimir A. Irkha, Alexandr S. Pashchenko

Keywords:

AlGaAs, GaAs, Heterostructures, InAs, Photodetectors, Quantum Dots, Solar Cells, Solar Energy, Spectral Characteristics

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