Influence of DC Current on Movement of Dislocations in P-Silicon Single Crystals in Field of Internal Stresses

Abstract:

The behavior of linear defects in p-type silicon (111) carrying a direct current of density 0−15×10⁵ A/m² in the [110] direction are studied in the temperature range T=850–1000 K during isothermal annealing. The regularities of change in the linear density and maximum path of dislocations in slip lines are revealed. A model of linear defects displacement in silicon single crystals in the field of internal stresses under an electric current is proposed. Matching theory with experimental data has made it possible to reveal the dependence of this distribution on the internal stresses relaxation time.

• Periodical: Solid State Phenomena (Volume 316)
• Pages: 975-980
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.316.975
• Online since: April 2021
• Authors: Alexander A. Solovyev, Vladislav V. Rybin*, Artem V. Kulagin
• Keywords: Dislocation Dynamics, Electric Current, Silicon

References

[1] Yu. Yoshida, G. Langouche, Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering, Springer Verlag, Japan, 2016, 487 p.

[2] S.M. Sze, M.-K. Lee, Semiconductor Devices: Physics and Technology, Wiley, 2012, 592p.

[3] A.M. Orlov, A.A. Solovyev, I.O. Yavtushenko, A.A. Skvortsov, Effect of an electric field on the dislocation structure of silicon upon indentation in water, Physics of the Solid State, 51 (2009) 50-54.

DOI: 10.1134/s1063783409010053

[4] J.D. Patterson, B.C. Bailey, Solid-State Physics: Introduction to the Theory, Springer, 2019, 954 p.

[5] A.A. Skvortsov, A.M. Orlov, V.A. Frolov, A.A. Solovyev, Electrically stimulated movement of edge dislocations in silicon in the temperature range 300–450 K, Physics of the Solid State, 42 (2000) 2054-2060.

DOI: 10.1134/1.1324039

[6] J. Solyom, Fundamentals of the Physics of Solids: Vol. 1, Structure and Dynamics, Springer, 2007, 697p.

[7] V.A. Makara, L.P. Steblenko, N.Ya. Goridko, V.M. Kravchenko, A.N. Kolomiets, On the influence of a constant magnetic field on the electroplastic effect in silicon crystals, Physics of the Solid State, 43 (2001) 480-483.

DOI: 10.1134/1.1356123

[8] R.J.D. Tilley, Defects in Solids, John Wiley & Sons, 2008, 552p.

[9] A.M. Stoneham, Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors, Clarendon Press, 2001, 955p.

[10] A.M. Orlov, A.A. Solovyev, A.A. Skvortsov, I.O. Yavtushenko, Redistribution of dislocations in silicon near stress concentrators, Physics of the Solid State, 47 (2005) 2049-2054.

DOI: 10.1134/1.2131143

[11] L.D. Landau, L.P. Pitaevskii, A.M. Kosevich, E.M. Lifshitz, Theory of Elasticity, Vol. 7, Elsevier, 2012, 195p.

[12] W. Cai, W.D. Nix, Imperfections in Crystalline Solids, Cambridge University Press, 2016, 519p.

[13] D.D.L. Chung, Materials for Electronic Packaging, Elsevier, 1995, 368p.

[14] L. Rosado, Electronica Fisica y Microelectronica, Paraninfo, 1991, 501p.

[15] H.F. Matare, Defect Electronics in Semiconductors, Wiley-Interscience, 1971, 639p.