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HomeSolid State PhenomenaSolid State Phenomena Vol. 323GAGG:Cr3+ Phosphors for Far-Infrared Light...

GAGG:Cr³⁺Phosphors for Far-Infrared Light Emitting Diodes

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Abstract:

Recently, Far-infrared Light Emitting Diodes have attracted considerable interest in the research field worldwide. Emerging light therapy requires effective red/far-infrared light resources in clinical and plant photomorphogenesis to target or promote the interaction of light with living organisms. Here, Gd₃Al₄GaO₁₂:Cr³⁺ (hereinafter referred to as: GAGG:Cr³⁺) phosphor was synthesized by high-temperature solid-phase method, and the crystal structure, morphology, and luminescence properties of this series of phosphor samples were studied. Through X-ray powder diffraction to obtain pure phase GAGG:Cr³⁺ series phosphor. Under the excitation of 420nm blue light, a broad band emission from 640 to 850nm is obtained, which is the result of the transition of Cr³⁺⁴T₂→⁴A₂level. A sharp emission peak at 693nm is the R line belonging to Cr³⁺ in Gd₃Al₄GaO₁₂ garnet. R line is assigned to the spin-forbidden ²E→⁴A₂ transitions of Cr³⁺ ions that occupy the ideal octahedral sites. As the Cr³⁺ doping concentration increases, the luminous intensity of the sample increases first and then decreases. When the doping concentration of Cr³⁺ is 0.1mol phosphor,the luminous intensity is strongest at one single broad peak at about 712nm. At 440k, the R sharp line (693nm) and broad band (712nm) emission intensity maintained 78.6% and 71.8% , compared to room temperature intensity, respectively. The change of fluorescence lifetime at different temperatures gives the mechanism of fluorescence change with temperature. The current exploration will pave a promising way to engineer GAGG:Cr³⁺ activated optoelectronic devices for all kinds of photobiological applications.

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Advanced Research in Materials Science IV

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Periodical:

Solid State Phenomena (Volume 323)

Pages:

66-75

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.323.66

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Online since:

August 2021

Authors:

Xiang Li, Da Hai Hu, Yi Zhi Ma, Yehejong Saqier, Xin Ran Wang, Feng Xiang Wang, Zhi Qiang Song, Ke Fu Chao*

Keywords:

Far Infrared, Fluorescence, Gd₃Al₄GaO₁₂:Cr³⁺, LEDs

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© 2021 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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