Preparation and Properties of B-Doped Silicon Carbide

Abstract:

To explore a new method to prepare B-doped silicon carbide, with B₂O₃ as a dopant, silicon dioxide and graphite as raw materials, B-doped silicon carbide (B_xSi_1-xC) was prepared using pressure-free sintering and self-spreading combustion methods. The material phase, microstructure, particle size, compressive strength and bulk density were characterized by the XRD, SEM, laser granularity tester, particle strength tester and powder comprehensive characteristic tester. The results show that the doping of B can inhibit the growth rate of the product, with the optimal ratio of SiO₂:C:B₂O₃=60:120:150. At the same time, the crystal type of the generated product B_xSi_1-xC is relatively complete. The D₅₀ is 17.3 μm, its bulk density is up to 1.08 g^-1cm^-3, and its single particle compression strength is second only to diamond, much higher than that of ordinary SiC.

• Periodical: Solid State Phenomena (Volume 331)
• Pages: 203-207
• DOI: https://doi.org/10.4028/p-fdz82o
• Online since: April 2022
• Authors: Yu Feng Wang, Zi Min Fan*, Fan Zhu
• Keywords: B-Doped, Self-Spreading Combustion Method, Silicon Carbide

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