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HomeSolid State PhenomenaSolid State Phenomena Vol. 332Recent Progress on Single-Crystal Growth and...

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

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Abstract:

The review article describes the recent progress on SiC single-crystal and epitaxial growth technology. SiC is a third-generation semiconducting material with wide bandgap and high electrical breakdown field. Thanks to its excellent properties, it becomes an advantageous material in the field of high-temperature and high-power electronic device applications. Power devices fabricated of SiC are able to be operated at higher power density and higher switching frequency. This review focus on the growth, doping control and defect control of SiC single-crystal ingot and epilayer. The process of PVT, CVD, defect control, doping control and some recent applications of SiC are described. Various types of defects are described, including Micropipes, Dislocations, Stacking Faults etc. The wafering and polishing technology are also described.

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Periodical:

Solid State Phenomena (Volume 332)

Pages:

73-84

DOI:

https://doi.org/10.4028/p-4x61u9

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Online since:

May 2022

Authors:

Yi Lin Liu*

Keywords:

Defects, Epitaxial Growth, Silicon Carbide, Single-Crystal Growth

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© 2022 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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