Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique

Hamed Alwan Gatea; Faten K. Hachim

doi:10.4028/p-93blco

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HomeSolid State PhenomenaSolid State Phenomena Vol. 341Studying the Effect of Annealing Temperature and...

Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique

Abstract:

Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant.

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Periodical:

Solid State Phenomena (Volume 341)

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49-55

DOI:

https://doi.org/10.4028/p-93blco

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Online since:

March 2023

Authors:

Hamed Alwan Gatea, Faten K. Hachim

Keywords:

Dielectric Constant, Ferroelectric Properties, Lead Zirconated Titanate, PZT Film

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