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Optical Characterization of Semiconducting Thin Films Using UV-VIS-NIR Spectroscopy: A Review

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Abstract:

The review article focuses on the growth of thin film and its characterization by UV-Vis-NIR spectroscopy. For UV-Vis-NIR spectroscopy of thin films, they are usually deposited on translucent quartz glass surfaces. The article reports the extraction of various thin film optical parameters viz., absorption coefficient (α), Urbach energy (Eu), optical band gap (Eg), refractive index (n), extinction coefficient (k), dielectric constants, dissipation factor (tanδ) and optical conductivity (σoptical) by using optical spectra (absorption(A)/transmittance (T)/reflectance (R)). Furthermore, the effect of thin film substrate temperature (Ts) and/or thickness (d) and/or post-deposition annealing temperature (Ta) on various optical parameters is discussed in detail.

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Periodical:

Solid State Phenomena (Volume 350)

Pages:

115-124

DOI:

https://doi.org/10.4028/p-YADdi5

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Cite this paper

Online since:

October 2023

Authors:

S.D. Dhruv*, Sergei A. Sharko, Pankaj Solanki, Mayur Vala, I.T. Thakker, Bharat Kataria, D.K. Dhruv

Keywords:

Absorption Coefficient, Dielectric Constants, Dissipation Factor, Extinction Coefficient, Optical Band Gap, Optical Conductivity, Refractive Index, Semiconducting Thin Film, UV-VIS-NIR Spectroscopy

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