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HomeSolid State PhenomenaSolid State Phenomena Vol. 359Improving HfO2 Thick Films for SiC Power Devices...

Improving HfO₂ Thick Films for SiC Power Devices by Si, Y and La Doping

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Abstract:

We investigated the electrical and structural effects of silicon (Si), yttrium (Y) and lanthanum (La) doping in 10-45 nm thick hafnium dioxide (HfO₂) films on silicon carbide (SiC) and Si substrates. We show that the introduction of Si dopants leads to a significant enhancement of the electric breakdown field and a reduction of the leakage current density by elevating the crystallization temperature. This effect becomes stronger with higher Si content. In contrast, Y and La doping does not raise T_C but increases the tetragonal and orthorhombic phase portion within the crystalline films and therefore enhances the dielectric constant k. Furthermore, we show that larger grains in crystalline films are associated with a higher leakage current density.

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Periodical:

Solid State Phenomena (Volume 359)

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29-34

DOI:

https://doi.org/10.4028/p-yZ4Fux

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Online since:

August 2024

Authors:

Sandra Krause*, Thomas Mikolajick, Uwe Schroeder

Keywords:

Breakdown Field, Crystallization Behavior, Dielectric Constant, Dielectric Stack, Doped HfO₂, Grain Size, High-K, Leakage Current

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