Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC

Kristijan Luka Mletschnig; Paweł Piotr Michałowski; Peter Pichler

doi:10.4028/p-Xwcxf0

Paper Titles

Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems
p.13

Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
p.21

Improving HfO₂ Thick Films for SiC Power Devices by Si, Y and La Doping
p.29

Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide
p.35

Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC
p.41

Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC
p.47

Prediction of Contact Resistance of 4H–SiC by Machine Learning Using Optical Microscope Images after Laser Doping
p.53

The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC
p.59

Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing
p.65

HomeSolid State PhenomenaSolid State Phenomena Vol. 359Transient-Enhanced Diffusion of Implanted Aluminum...

Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC

Abstract:

Semiconductor devices rely on the incorporation of donor and acceptor atoms into the crystal lattice to form locally doped regions. For dopant atoms incorporated into SiC by ion implantation, a high-temperature annealing step is required to achieve electrical activation. This annealing step is accompanied by redistribution of the implanted atoms. The influence of the annealing parameters on dopant redistribution is crucial when aiming for ever smaller device dimensions. In this work, we present a consistent analysis of the diffusion of Al implanted in 4H-SiC after high-temperature annealing at 1650 °C and 1800 °C for different annealing times. We identify the equilibrium diffusion coefficient at long annealing times from Al profiles obtained by SIMS analyses for both annealing temperatures. The temperature dependence is determined using an Arrhenius representation. This allows to quantify the equilibrium diffusion lengths for the actual temperature profiles, including heating and cooling rates. We find that the measured diffusion lengths for short annealing times are larger than expected from equilibrium diffusion and attribute the excess length to transient enhanced diffusion. Comparing the transient diffusion lengths of room-temperature and 500 °C-implanted samples, we conclude that the transient behavior is likely related to residual crystal damage induced during the implantation process.

By email View Pdf

You might also be interested in these eBooks

20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

View Preview

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 359)

Pages:

41-46

DOI:

https://doi.org/10.4028/p-Xwcxf0

Citation:

Cite this paper

Online since:

August 2024

Authors:

Kristijan Luka Mletschnig*, Paweł Piotr Michałowski, Peter Pichler

Keywords:

Aluminum, Annealing, Diffusion, Equilibrium, Implantation, SIMS, TED, Thermal, Transient

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] E.N. Mokhov, Y.A. Vodakov and G.A. Lomakina, Sov. Phys. Sol. State 11(2),(1969),415-416.

Google Scholar

[2] Y. Tajima, K. Kijima and W. D. Kingery, J. Chem. Phys 77(5), (1982), 2592-2598.

Google Scholar

[3] O. Krause, H. Ryssel, and P. Pichler, J. Appl. Phys. 91(9), (2002), 5645-5649.

Google Scholar

[4] W. Lucke, J. Comas, G. Hubler and K. Dunning, J. Appl. Phys. 46(3), (1975), 994-997.

Google Scholar

[5] N. G. Chechenin, K. K. Bourdelle, A. V. Suvorov and A. X. Kastilio-Vitloch, Nucl. Instrum. Meth. B 65(1-4), (1992), 341-344.

Google Scholar

[6] Y. Negoro, K. Katsumoto, T. Kimoto and H. Matsunami, J. Appl. Phys. 96(1),(2004), 224-228.

Google Scholar

[7] P. P. Michałowski, S. Kozdra, I. Pasternak, J. Sitek, A. Wójcik and W. Strupiński, Measurement 187, (2022), 110308.

DOI: 10.1016/j.measurement.2021.110308

Google Scholar

[8] J. B. Malherbe, P. A. Selyshchev, O. S. Odutemowo, C. C. Theron, E. G. Njoroge, D. F. Langa and T. T. Hlatshwayo, Nucl. Instrum. Meth. B 406, (2017), 708-713.

DOI: 10.1016/j.nimb.2017.04.067

Google Scholar

[9] R. G. Wilson, Radiat. Eff. Defect. S. 46, 3-4, (1980), 141-147.

Google Scholar

[10] I. O. Usov, A. A. Suvorova, V. V. Sokolov, Y. A. Kudryavtsev and A. V. Suvorov, Mater. Res. Soc. Symp. P. 504, (1998), 141-146.

Google Scholar

[11] P. Pichler, R. Schork, T. Klauser and H. Ryssel, IEICE T. Electron. 75(2), (1992), 128-137.

Google Scholar