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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Oxygen and Copper Precipitation in the Vicinity of...

Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

133-138

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.133

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Online since:

March 1994

Authors:

A. Correia, D. Ballutaud, J.L. Maurice

Keywords:

Copper (Cu), Electron Beam Induced Current (EBIC), Oxidation Stacking Fault, Oxygen, Precipitation, Silicon-Silicon-Dioxide Interface, TEM

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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