Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties

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Periodical:

Solid State Phenomena (Volumes 37-38)

Edited by:

H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud

Pages:

133-138

DOI:

10.4028/www.scientific.net/SSP.37-38.133

Citation:

A. Correia et al., "Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties", Solid State Phenomena, Vols. 37-38, pp. 133-138, 1994

Online since:

March 1994

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$35.00

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