Paper Titles

Local Grain Boundary Property Measurements
p.171

Local Investigation of the Electrical Properties of Grain Boundaries in Silicon
p.183

Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping
p.189

Minority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky Contact
p.195

Electrical Transport in Polycrystalline Semiconductors
p.201

Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors
p.213

Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon
p.219

On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment
p.225

Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors
p.231

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Electrical Transport in Polycrystalline...

Electrical Transport in Polycrystalline Semiconductors

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Abstract:

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

201-212

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.201

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Cite this paper

Online since:

March 1994

Authors:

O. Ka

Keywords:

Conductivity, Electrical Properties, Hall-Effect, Hopping Conduction, Potential Barrier, Potential Fluctuations, Two-Phase Model

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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