Paper Titles

Minority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky Contact
p.195

Electrical Transport in Polycrystalline Semiconductors
p.201

Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors
p.213

Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon
p.219

On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment
p.225

Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors
p.231

Investigation of the Defect Distribution in Polycrystalline Silicon
p.243

Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies
p.249

Microscopic Processes in Crystallisation
p.257

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38On Some Photoelectrical Interface Processes in...

On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors III

Info:

Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

225-230

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.225

Citation:

Cite this paper

Online since:

March 1994

Authors:

M. Gherghel, I. Licea

Keywords:

Guard Semiconductor Structure, Negative Photoconduction Phenomenon, Optical Absorption Mechanism, Photovoltaic Properties, Quantical Tunneling Effect, Schottky Barrier, Tandem Cell System

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: