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Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors
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Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon
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On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment
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Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors
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Investigation of the Defect Distribution in Polycrystalline Silicon
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Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies
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Microscopic Processes in Crystallisation
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Laser Beam Application in Semiconductor Technology
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In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Investigation of the Defect Distribution in...

Investigation of the Defect Distribution in Polycrystalline Silicon

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

243-248

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.243

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Online since:

March 1994

Authors:

A. Zozime, O.F. Vyvenko, I. Hanke, Wolfgang Schröter, K. Ahlborn, K. Heisig

Keywords:

Deep Level, Deep Level Transient Spectroscopy, Electron Beam Induced Current (EBIC), Gettering, Optical DLTS (ODLTS), Polycrystalline Silicon

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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