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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38In-Situ Excimer Laser Induced Crystallization of...

In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

281-286

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.281

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Online since:

March 1994

Authors:

N. Layadi, Pere Roca i Cabarrocas, J. Huc, J.-Y. Parey, B. Drévillon

Keywords:

Amorphous Silicon, Dark Conductivity, Ellipsometry, Excimer Laser, Microcrystalline Silicon, RF Plasma

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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