In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films
p.281
p.281
Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films
p.287
p.287
Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
p.293
p.293
Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon
p.299
p.299
Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6
p.305
p.305
Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
p.311
p.311
Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons
p.317
p.317
Decomposition and Microstructure during Crystallization of Amorphous GexSi1-x Films
p.323
p.323
A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)
p.329
p.329
Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6
Abstract:
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Periodical:
Solid State Phenomena (Volumes 37-38)
Pages:
305-310
Citation:
Online since:
March 1994
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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