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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Crystallisation Behaviour of Amorphous Thin Si...

Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

293-298

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.293

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Online since:

March 1994

Authors:

J.P. Guillemet, Bernard Pieraggi, B. Legros-de Mauduit, A. Claverie

Keywords:

Crystallization, Disilane, In Situ TEM, Low Pressure Chemical Vapor Deposition, Nucleation, Si Thin Films

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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