Paper Titles

Laser Beam Application in Semiconductor Technology
p.269

In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films
p.281

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films
p.287

Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
p.293

Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon
p.299

Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si₂H₆
p.305

Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
p.311

Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons
p.317

Decomposition and Microstructure during Crystallization of Amorphous Ge_xSi_1-x Films
p.323

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Beam Shape Effects with Excimer Laser...

Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

299-304

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.299

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Online since:

March 1994

Authors:

S.D. Brotherton, D.J. McCulloch, M.J. Edwards

Keywords:

Hydrogen, Laser Crystallization, Surface Roughness (SR), Thin Film Transistor

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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