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Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
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Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon
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Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si₂H₆
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Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
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Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons
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Decomposition and Microstructure during Crystallization of Amorphous Ge_xSi_1-x Films
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A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)
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Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal
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The Art of Living with Defects in Silicon: Gettering and Passivation
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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Grain Boundary Character Distribution in Rapidly...

Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

317-322

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.317

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Online since:

March 1994

Authors:

T. Watanabe, K.I. Arai, H. Terashima, H. Oikawa

Keywords:

Grain Boundary, Grain Boundary Character Distribution (GBCD), Grain Boundary Control, Rapid Solidification

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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