A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)

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Periodical:

Solid State Phenomena (Volumes 37-38)

Edited by:

H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud

Pages:

329-334

DOI:

10.4028/www.scientific.net/SSP.37-38.329

Citation:

T.E. Dyer et al., "A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)", Solid State Phenomena, Vols. 37-38, pp. 329-334, 1994

Online since:

March 1994

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