Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6
p.305
p.305
Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
p.311
p.311
Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons
p.317
p.317
Decomposition and Microstructure during Crystallization of Amorphous GexSi1-x Films
p.323
p.323
A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)
p.329
p.329
Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal
p.335
p.335
The Art of Living with Defects in Silicon: Gettering and Passivation
p.343
p.343
Hydrogen and Deuterium in Semi-Crystalline Silicon Wafers and Solar Cells
p.355
p.355
External Gettering around Extended Defects in Multicrystalline Silicon Wafers
p.361
p.361
A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)
Abstract:
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Periodical:
Solid State Phenomena (Volumes 37-38)
Pages:
329-334
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Online since:
March 1994
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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