Paper Titles

A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)
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Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal
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The Art of Living with Defects in Silicon: Gettering and Passivation
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Hydrogen and Deuterium in Semi-Crystalline Silicon Wafers and Solar Cells
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External Gettering around Extended Defects in Multicrystalline Silicon Wafers
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Evidence for Defect Metastability in Hydrogen Passivated Fine Grain Polycrystalline Silicon
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Deuterium Effusion from Microcrystalline Sputtered Silicon Thin Films: Hydrogen Stability and Bonding Configurations
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Defect Structure of Multicrystalline Chemical Vapor Deposited Silicon Films
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Optical and Photoelectrical Properties of Microcrystalline Silicon Layers in Relation to Structural Ordering
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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38External Gettering around Extended Defects in...

External Gettering around Extended Defects in Multicrystalline Silicon Wafers

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

361-366

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.361

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Cite this paper

Online since:

March 1994

Authors:

Santo Martinuzzi, I. Perichad, M. Stemmer

Keywords:

Diffussion Length Mapping, Oxygen Precipitation, Phosphorus Gettering

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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