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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Evidence for Defect Metastability in Hydrogen...

Evidence for Defect Metastability in Hydrogen Passivated Fine Grain Polycrystalline Silicon

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

367-372

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.367

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Online since:

March 1994

Authors:

N.H. Nickel, N.M. Johnson, W.B. Jackson

Keywords:

Electron Spin Resonance, Grain Boundary, Hydrogen, Light-Induced Defects, Metastability, Passivation, Si Dangling Bonds

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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