Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal

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Periodical:

Solid State Phenomena (Volumes 37-38)

Edited by:

H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud

Pages:

335-342

DOI:

10.4028/www.scientific.net/SSP.37-38.335

Citation:

J.L. Maurice et al., "Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal", Solid State Phenomena, Vols. 37-38, pp. 335-342, 1994

Online since:

March 1994

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$35.00

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