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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Microstructure and Transistor Properties of...

Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

335-342

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.335

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Online since:

March 1994

Authors:

J.L. Maurice, J. Dixmier, T. Kretz, P. Legagneux, F. Plais, Didier Pribat

Keywords:

TEM, Thin Film Transistor, Twin, X-Ray Diffraction (XRD)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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