Paper Titles

Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors
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Investigation of the Defect Distribution in Polycrystalline Silicon
p.243

Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies
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Microscopic Processes in Crystallisation
p.257

Laser Beam Application in Semiconductor Technology
p.269

In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films
p.281

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films
p.287

Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
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Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon
p.299

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Laser Beam Application in Semiconductor Technology

Laser Beam Application in Semiconductor Technology

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

269-280

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.269

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Online since:

March 1994

Authors:

Toshiyuki Sameshima

Keywords:

Laser Amorphization, Laser Crystallization, Plasma Hydrogenation, Polycrystalline Silicon Thin Film Transistors, Remote Plasma CVD

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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