Paper Titles

Electrical Transport in Polycrystalline Semiconductors
p.201

Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors
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Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon
p.219

On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment
p.225

Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors
p.231

Investigation of the Defect Distribution in Polycrystalline Silicon
p.243

Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies
p.249

Microscopic Processes in Crystallisation
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Laser Beam Application in Semiconductor Technology
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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Polycrystalline Silicon-Silicon Carbide Emitters...

Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors

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Abstract:

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

231-242

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.231

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Online since:

March 1994

Authors:

H.S. Gamble, G.A. Armstrong

Keywords:

BiCMOS, Heterojunction Transistors, Silicon Carbide (SiC), Silicon-Germanium (SiGe)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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