Paper Titles

Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies
p.249

Microscopic Processes in Crystallisation
p.257

Laser Beam Application in Semiconductor Technology
p.269

In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films
p.281

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films
p.287

Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
p.293

Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon
p.299

Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si₂H₆
p.305

Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
p.311

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Microstructure of Poly-Si Obtained by Rapid...

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors III

Info:

Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

287-292

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.287

Citation:

Cite this paper

Online since:

March 1994

Authors:

J. Stoemenos, N.A. Economou, L. Haji, M. Bonnel, N. Duhamel, B. Loisel

Keywords:

Poly-Si TFT, Rapid Thermal Annealing (RTA), Solid Phase Crystallization, Thermal Stability of Microtwins

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: