How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?
p.25
p.25
About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells
p.31
p.31
g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si
p.35
p.35
Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation
p.41
p.41
In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope
p.47
p.47
Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors
p.55
p.55
Structure of Grain Boundaries in Polycrystalline Semiconductors
p.67
p.67
High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
p.75
p.75
Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method
p.85
p.85
In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope
Abstract:
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Periodical:
Solid State Phenomena (Volumes 37-38)
Pages:
47-54
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Online since:
March 1994
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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