Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation
p.41
p.41
In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope
p.47
p.47
Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors
p.55
p.55
Structure of Grain Boundaries in Polycrystalline Semiconductors
p.67
p.67
High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
p.75
p.75
Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method
p.85
p.85
Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon
p.91
p.91
Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal
p.97
p.97
Möbius Tight Binding Calculations for Grain Boundaries
p.103
p.103
High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Solid State Phenomena (Volumes 37-38)
Pages:
75-84
Citation:
Online since:
March 1994
Authors:
Keywords:
Price:
Сopyright:
© 1994 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: