High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 37-38)

Edited by:

H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud

Pages:

75-84

DOI:

10.4028/www.scientific.net/SSP.37-38.75

Citation:

O.B.M. Hardouin Duparc "High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions", Solid State Phenomena, Vols. 37-38, pp. 75-84, 1994

Online since:

March 1994

Export:

Price:

$35.00

In order to see related information, you need to Login.