Paper Titles

Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors
p.55

Structure of Grain Boundaries in Polycrystalline Semiconductors
p.67

High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
p.75

Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method
p.85

Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon
p.91

Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal
p.97

Möbius Tight Binding Calculations for Grain Boundaries
p.103

Structural and Electrical Transport Properties of Grain Boundaries in High Temperature Superconductors
p.107

The Microstructure of Sm_2-xCe_xCuO_4-δ
p.119

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Improved Quasiharmonic Methods for Grain Boundary...

Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors III

Info:

Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.91

Citation:

Cite this paper

Online since:

March 1994

Authors:

A. Hairie, F. Hairie, Gerard Nouet, E. Paumier, A.P. Sutton

Keywords:

Free Energy, Grain Boundary, Pulse Response, Quasiharmonic Method, Recursion Method

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: