Paper Titles

About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells
p.31

g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si
p.35

Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation
p.41

In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope
p.47

Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors
p.55

Structure of Grain Boundaries in Polycrystalline Semiconductors
p.67

High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
p.75

Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method
p.85

Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon
p.91

HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Theoretical Study of the Atomic and Electronic...

Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

55-66

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.55

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Online since:

March 1994

Authors:

Masanori Kohyama, Ryoichi Yamamoto

Keywords:

Compound Semiconductor, Coordination Defect, Electronic Structure, Interface Stoichiometry, Non-Polar Interfaces, Polar Interfaces, Structural Disorder, Tight-Binding Method, Tilt Boundary, Twist Boundary, Wrong Bond

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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