Paper Titles

Crystalline Bi₂Se₃ Thin Films: Growth and Properties
p.7

Growth of High Purity GaAs Layers by Vapour Phase Epitaxy
p.10

Amorphous Chalcogenide Semiconductors: The Role of Bismuth Addition
p.14

Suppression of Auger Recombination by Strain in Sb Based mid-IR Lasers
p.20

Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics
p.26

Physical Principles of New Devices Related to Giant Electric Field Effect in MDS Structure
p.29

Raman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High Pressures
p.32

Microprocessing of Electronic Materials Using Short Wavelength Lasers
p.38

Band Gap Measurement of the Sintered Cd_x Se_1-x Films from Reflectance Measurement
p.40

HomeSolid State PhenomenaSolid State Phenomena Vol. 55Study of Gate Length, Channel Length and...

Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics

Article Preview

Abstract:

You might also be interested in these eBooks

Semiconductor Materials and Technology (ICSMT)

Info:

Periodical:

Solid State Phenomena (Volume 55)

Pages:

26-28

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.26

Citation:

Cite this paper

Online since:

August 1997

Authors:

Nandita Dasgupta, Srinivasa Murthy G.B

Keywords:

Gallium Arsenide, Mesa Isolation, MESFET, Self-Aligned

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: